Spectroscopy of Semiconductor Microstructures 53 3Produktlebenszyklus16
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3Produktlebenszyklus16
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Spectroscopy of Semiconductor Microstructures 53 3Produktlebenszyklus16IDES have been realized in modulation doped AIGaAs GaAs heterostructures by fabricating split gate configurations and ultrafine etched structures with optimized lithography and etching techniques. With deep mesa etching technique it is possible to prepare single and multi layered quantum wire systems. From dc magnetotransport typical confinement energies of 2me V are determined. The FIR response is strongly governed by collective effects which give
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